Various SSM4957GM - DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS free download

File name SSM4957GM - DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS.pdf

SSM4957(G)M DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV DSS -30V D2 Lower gate charge D1 D2 R DS(ON) 24m D1 Fast switching characteristics ID -7.7A G2 S2 SO-8 S1 G1 Description D1 D2 Advanced Power MOSFETs from Silicon Standard provide the G1 G2 designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S1 S2 The SSM4957M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low-voltage applications. This device is available with Pb-free lead finish (second-level interconnect) as SSM4957GM. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage